| PART |
Description |
Maker |
| M68707L 68707L |
215-230MHz, 9.6V, 7W, FM PORTABLE RADIO
From old datasheet system
215-230MHZ, 9.6V, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| EKIN2-220D |
215-225 MHz,I/Q demodulator
E-Series I/Q Demodulator 215 - 225 MHz E系列的I / Q解调15 - 225兆赫
|
MA-Com
http://
MACOM[Tyco Electronics]
Cypress Semiconductor, Corp.
|
| 2N5591 RF55 2N5589 SD1216 2N5590 SD1212-02 SD1214- |
RF & MICROWAVE TRANSISTORS 130...230MHz FM MOBILE APPLICATIONS
From old datasheet system
|
MICROSEMI[Microsemi Corporation]
Seme LAB
|
| MTE215N10E_D ON2531 MTE215N10E |
TMOS POWER FET 215 AMPERES 100 VOLTS RDS(on) = 0.0055 OHM
From old datasheet system
|
Motorola, Inc
ON Semi
|
| HEDS5145A04 HEDS5145A02 HEDS5145A01 HEDS5145A06 HE |
LTM9001-AD - 16-Bit IF/Baseband Receiver Subsystem; Package: LGA; No of Pins: 81; Temperature Range: -400°C to 85°C
LTM9001-AD - 16-Bit IF/Baseband Receiver Subsystem; Package: LGA; No of Pins: 81; Temperature Range: 0°C to 70°C
LTC6412 - 800MHz, 31dB Range An alog-Controlled VGA; Package: 24-Lead (4mm × 4mm) Plastic QFN; Temperature Range: –40°C to 85°C
LTM9002-AA - 14-Bit Dual-Channel IF/ Baseband Receiver Subsystem; Package: 108-Lead (15mm × 11.25mm × 2.3mm) LGA; Temperature Range: 0 to 70°C 光电
LTM9002-LA - 14-Bit Dual-Channel IF/ Baseband Receiver Subsystem; Package: 108-Lead (15mm × 11.25mm × 2.3mm) LGA; Temperature Range: –40°C to 85°C 光电
|
Infineon Technologies AG
Electronic Theatre Controls, Inc.
|
| BAV199LT1 |
70 V, 215 mA, dual switching diode
|
Leshan Radio Company
|
| LT3652EDDPBF |
Power Tracking 2A Battery Charger for Solar Power, LFHT, 12-Lead Plastic DFN 3mm × 3mm, Temperature Range: –40°C to 125°C 3 A BATTERY CHARGE CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO12
|
Linear Technology, Corp.
|
| RA07M2127M10 |
215-270MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| NJU6678V |
104Com × 132Seg Output Bit Map LCD Driver
|
New Japan Radio
|
| NJU6679 |
128Com × 132Seg Output Bit Map LCD Driver
|
New Japan Radio
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
